WTC6401 Datasheet, PDF (1/6 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET

WTC6401
P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R _DS(ON) <50mΩ@V _GS =-4.5V
*Rugged and Reliable
*Simple Drive Requirement
*Fast Switching
*SOT-23 Package
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
DRAIN CURRENT
-4.3 AMPERES
DRAIN SOURCE VOLTAGE
-12 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_{G S}
Continuous Drain Current ³ ,(T_A=25˚C)
,(T_A=70˚C)
I_D
Pulsed Drain Current ¹
Total Power Dissipation(T A=25˚C)
Maximum Thermal Resistace Junction-ambient ³
Operating Junction and Storage Temperature Range
I _DM
P_D
R _θJA
T_J, T_stg
Value
-12
±8
-4.3
-3.4
-12
1.38
90
- 55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTC6401=6401
WEITRON
1/6
http:www.weitron.com.tw
06-May-05