WTC4501 Datasheet, PDF (1/4 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
3 DRAIN
Features:
2 SOURCE
* Leading Planar Technology for Low Gate Charge / Fast Switching.
* 2.5V Rated for Low Voltage Gate Drive.
* SOT−23 Surface Mount for Small Footprint.
Applications:
* Load/Power Switch for Portables.
* Load/Power Switch for Computing.
* DC−DC Conversion.
WTC4501
DRAIN CURRENT
3.2 AMPERES
DRAIN SOUCE VOLTAGE
20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings (T_A=25°C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Value
20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA=25°C
TA=85°C
tp=10μS
V_GS
±12
I_D
3.2
2.4
I_DM
10
Continuous Source Current (Body Diode)
Total Power Dissipation (T_A=25°C )
Maximum Junction-Ambient ^1,2
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Operating Junction Temperature Range
I_S
1.6
P_D
1.25
100
R θJA
300
T_L
260°
T_J
-55~+150
Storage Temperature Range
Tstg
-55~+150
1. Surface−mounted on FR4 board using 1 in sq pad size(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Device Marking
WTC4501 = N45
Unit
V
V
A
A
A
W
°C/W
°C
°C
°C
WEITRON
http://www.weitron.com.tw
1/4
06-Nov-09