WTC2309 Datasheet, PDF (1/6 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R _DS(ON) <75m Ω@V _GS =-10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2309
DRAIN CURRENT
-3.7 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_{G S}
Continuous Drain Current ³ ,(TA=25˚C)
,(T_A=70˚C)
I_D
Pulsed Drain Current ^1,2
Total Power Dissipation(T_A=25˚C)
Maximum Thermal Resistance Junction-ambient ³
Operating Junction and Storage Temperature Range
I_DM
P_D
R _θJA
T_J, T_stg
Value
-30
±20
-3.7
-3.0
-12
1.38
90
-55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTC2309=2309
WEITRON
http:www.weitron.com.tw
1/6
23-May-05