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| WTC2308 Datasheet, PDF (1/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET | |||
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N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <160 mâ¦@V GS =10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2308
DRAIN CURRENT
3 AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(TA=25â Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 3 ,(TA
ID
,(TA
Pulsed Drain Current 1,2
IDM
Total Power Dissipation(TA =25ËC)
PD
Maximum Thermal Resistance Junction-ambient 3
R âJA
Operating Junction and Storage Temperature Range
TJ, Tstg
Value
60
±20
3.0
2.3
10
1.38
90
-55~+150
Unit
V
A
W
â/W
â
Device Marking
WTC2308=2308
WEITRON
1/6
http:www.weitron.com.tw
24-May-05
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