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| WTC2307 Datasheet, PDF (1/6 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET | |||
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P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <60m â¦@V GS=-4.5V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
WTC2307
DRAIN CURRENT
-4.0 AMPERS
DRAIN SOUCE VOLTAGE
-16 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(TA=25â Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VG S
Con tinuous Drain Current 3 (TA=25ËC)
ID
(TA=70ËC)
Pulsed Drain Current 1
IDM
Total Power Dissipation (TA=25ËC)
Maximum (Thermal Resistance) Junction-ambient 3
Operating Junction and Storage Temperature Range 3
PD
R θJA
TJ, Tstg
Value
-16
±8
-4.0
-3.3
-12
1.38
90
-55~+150
Unit
V
A
W
ËC/W
ËC
Device Marking
WTC2307=2307
WEITRON
http:www.weitron.com.tw
1/6
16-May-05
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