WTC2306_09 Datasheet, PDF (1/4 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
* Super High Dense Cell Design For Low R_DS(on)
R_DS(on) < 38mΩ @ VGS = 10V
* Rugged and Reliable
* Simple Drive Requirement
* SOT-23 Package
Applications:
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System
3 DRAIN
2
SOURCE
WTC2306
DRAIN CURRENT
5.8 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
3
1
2
SOT-23
Maximum Ratings (TA
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
Symbol
V_DS
V_GS
I_D
I_DM
Value
30
±12
5.8
30
Total Power Dissipation (TA=25°C)
Maximum Junction-Ambient²
Operating Junction Temperature Range
PD
1.4
R_θJA
140
TJ
-55~+150
Storage Temperature Range
Tstg
-55~+150
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in² 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Unit
V
V
A
A
W
°C/W
°C
°C
Device Marking
WTC2306 = N06
WEITRON
http://www.weitron.com.tw
1/4
Rev.B 17-Aug-09