WTC2306 Datasheet, PDF (1/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R _DS(ON) <90mΩ@V _GS =12V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-23 Package
3 DRAIN
2
SOURCE
WTC2306
DRAIN CURRENT
5.3 AMPERS
DRAIN SOUCE VOLTAGE
20 VOLTAGE
3
1
2
SOT-23
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current³ ,V_GS@4.5V(T_A
I_D
,V_GS@4.5V(T_A
Pulsed Drain Current^1,2
I_DM
Total Power Dissipation(TA=25℃)
P_D
Maximum Junction-ambient³
R _{ⓝ JA}
Operating Junction and Storage Temperature Range
T_J, T_stg
Value
20
±12
5.3
4.3
10
1.38
90
-55~+150
Unit
V
A
W
℃/W
℃
Device Marking
WTC2306=2306
WEITRON
http:www.weitron.com.tw
1/6
13-May-05