WTC2305DS Datasheet, PDF (1/5 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R _DS(ON) <68m Ω@V _GS =-4.5 V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
WTC2305DS
DRAIN CURRENT
-3.5 AMPERES
DRAIN SOURCE VOLTAGE
-8 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_{G S}
Continuous Drain Current ³ ,(T_A
I_D
Pulsed Drain Current ^1,2
I_DM
Total Power Dissipation(T A=25˚C)
P_D
Value
-8
±8
-3.5
-12
225
Unit
V
A
mW
Operating Junction and Storage Temperature Range
T_J, T_stg
-55~+150
˚C
Device Marking
WTC2305 = P5S
WEITRON
http://www.weitron.com.tw
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24-Aug-09