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| WTC2305A Datasheet, PDF (1/6 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET | |||
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P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <60m â¦@V GS =-10V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2305A
DRAIN CURRENT
-3.2 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(TA=25â Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VG S
Continuous Drain Current 3 ,(TA
ID
,(TA
Pulsed Drain Current 1,2
IDM
Total Power Dissipation(TA =25ËC)
Maximum Thermal Resistance Junction-ambient 3
Operating Junction and Storage Temperature Range 3
PD
R θJA
TJ, Tstg
Value
-30
±12
-3.2
-2.6
-10
1.38
90
-55~+150
Unit
V
A
W
ËC/W
ËC
Device Marking
WTC2305A=2305A
WEITRON
http:www.weitron.com.tw
1/6
23-May-05
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