WTC2302_09 Datasheet, PDF (1/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
*Super High Dense Cell Design For Low R _DS(ON)
R_DS(ON) <60m Ω@V_GS =4.5V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
3 DRAIN
2
SOURCE
WTC2302
DRAIN CURRENT
2.3 AMPERES
DRAIN SOUCE VOLTAGE
20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ³
(T_A
I_D
Pulsed Drain Current ^{1, 2}
I_DM
Total Power Dissipation (T_A=25°C )
P_D
Maximum Junction-ambient³
R θJA
Operating Junction and Storage Temperature Range
T_J , T_{s tg}
Value
20
±8
2.3
8
0.9
145
-55~+150
Unit
V
A
A
W
°C /W
°C
Device Marking
WTC2302 = N02
WEITRON
http://www.weitron.com.tw
1/6
Rev.B 24-Aug-09