WTC2301_10 Datasheet, PDF (1/6 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET

WTC2301
P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
P b Lead(Pb)-Free
1
GATE
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R _DS(ON) <100mΩ@V _GS =-4.5V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
DRAIN CURRENT
-2.3 AMPERES
DRAIN SOURCE VOLTAGE
-20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_{G S}
Continuous Drain Current ³
I_D
Pulsed Drain Current ^1,2
I_DM
Total Po wer Dis sipation(T A=25˚C)
(T A=75˚C)
P_D
Maximum Junction-ambient³
RθJA
Maximum Junction-case
RθJC
Ambient Temperature
T_a
Case Temperature
T_c
Operating Junction Temperature Range
T_J
Storage Temperature Range
T _stg
Value
-20
±8
-2.3
-8
0.9
0.57
140
100
150
150
150
-55~+150
Unit
V
A
A
W
˚C /W
˚C /W
˚C
˚C
˚C
˚C
Device Marking
WTC2301 = 01
WEITRON
http://www.weitron.com.tw
1/6
Rev.D 29-Mar-10