WTC1333 Datasheet, PDF (1/6 Pages) Weitron Technology – Surface Mount P-Channel Enhancement Mode MOSFET

Surface Mount P-Channel
Enhancement Mode MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R _DS(ON) <600mΩ@V _GS =-10V
*Simple Gate Drive
*Small package Outline
*Fast Switching Speed
*SOT-23 Package
2
SOURCE
Description
*Designer with best combination of fast switching
*Low on-resistance
*Cost-effectiveness
WTC1333
DRAIN CURRENT
-550m AMPERES
DRAIN SOURCE VOLTAGE
-20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current³ ,(T_A=25˚C)
,(T_A=70˚C)
I_D
Pulsed Drain Current^1,2
Total Power Dissipation(T_A=25˚C)
Maximum Thermal Resistace Junction-ambient
Operating Junction and Storage Temperature Range
I_DM
P_D
R_θJA
TJ,Tstg
Value
-20
±12
-550
-440
2.5
1.0
125
- 55~+150
Unit
V
mA
W
˚C/W
˚C
Device Marking
WTC1333=1333
WEITRON
1/6
http:www.weitron.com.tw
17-Jun-05