WT6401 Datasheet, PDF (1/6 Pages) Weitron Technology – P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R_DS(ON)<50mΩ@V_GS=10V
*Rugged and Reliable
*Simple Drive Requirement
*Fast Switching
*1.8V Gate Rated
*SOT-23 Package
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
WT6401
DRAIN CURRENT
-4.3 AMPERS
DRAIN SOUCE VOLTAGE
-12 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25�C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current³ ,V_GS@10V(T_A
I_D
,V_GS@10V(T_A
Pulsed Drain Current¹
I_DM
Total Power Dissipation(TA=25℃)
P_D
Maximum Junction-ambient³
Rⓝ_JA
Operating Junction and Storage Temperature Range
T_J, T_stg
Value
±
3
1.38
90
-55~+150
Unit
V
A
W
℃/W
℃
Device Marking
WT6401=6401
WEITRON
1/6
http:www.weitron.com.tw
06-May-05