 English |
|
|
|
|
|
|
|
| WT2310 Datasheet, PDF (1/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET | |||
| |||
|
N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
2
SOURCE
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<90mâ¦@VGS=10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
WT2310
DRAIN CURRENT
3 AMPERS
DRAIN SOUCE VOLTAGE
60 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(TA=25â Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current3 ,VGS@10V(TA
ID
,VGS@10V(TA
Pulsed Drain Current1,2
IDM
Total Power Dissipation(TA=25â)
PD
Maximum Junction-ambient3
RâJA
Operating Junction and Storage Temperature Range
TJ, Tstg
Value
60
±20
3.0
2.3
10
1.38
90
-55~+150
Unit
V
A
W
â/W
â
Device Marking
WT2310=2310
WEITRON
1/6
http:www.weitron.com.tw
05-May-05
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese