WT-Z210V-AU4 Datasheet, PDF (1/1 Pages) Weitron Technology – Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection

WT-Z210V-AU4
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application
1-2 This specification applies to N/P/N-Type silicon Zener diode chip (Dual pad/Vertical)
Device NO:WT-Z210V-AU4
2. Structure:
2-1 Planar type: Silicon Diode
2-2 Electrodes:
Top side : Gold Pad.(Cathode)
Back side : Gold Layer.(Anode)
3. Size:
3-1 Chip size: 10.0 mils x 10.0 mils (254 um x 254 um).
3-2 Chip thickness: 4.0 ± 1.0 mils (100 ± 25.4 um).
3-3 Dual Bonding pad: 7.7 mils x 7.7mils (195um x 195um).
3-4 Pattern drawing: Refer to the attached drawing.
4. Electrical Characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Zener Voltage
Vz (Top)
Vz (Back)
Iz=5mA
5.8
-
7.0
V
5.4
-
6.6
Forward
Voltage
Vf
IF=20mA
1.2
V
Reverse Leakage
Current
Electrostatic
Discharge
IR
ESD
VR=4V
HBM
8.0
MIL-STD 883
100 nA
KV
5. Drawing:
Bonding pad
Top side
(Top View)
6. Protection Circuit:
N
P-Sub
N
LED
Protection
Zener
Back Side
Bonding pad
Bonding pad
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30 - Jun - 06