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WT-Z210P Datasheet, PDF (1/1 Pages) Weitron Technology – Zener Diode Chips (Dual Pad) for ESD Protection
WT-Z210P
Zener Diode Chips (Dual Pad) for ESD Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application
1-2 This specification applies to P-Type silicon Zener diode chip (Dual pad) Device NO:WT-Z210P
2. Structure:
2-1 Planar type: Silicon Diode
2-2 Electrodes:
3. Size:
Top side:Aluminum Alloy(Anode).
Back side:Gold Layer(Cathode).
3-1 Chip size: 11.0 mils I I 11.0 mils (280 um I I280 um).
3-2 Chip thickness: 6.0 +- 1.0 mils (152+- 25.4 um).
3-3 Active area: 1/2 I I7.3 mils I I7.3 mils I I2 (1/2 I I186 um I I186 um I I2).
3-4 Dual Bonding pad: 1/2 I I6.8 mils I I6.8 mils I I2 (1/2 I I173 um I I173 um I I 2).
Hight of Hypotenuse: 5.23 mils(133 um).
3-5 Pattern drawing: Refer to the attached drawing.
4. Electrical Characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Zener Voltage
Vz
Forward
Vf
Voltage
Reverse Leakage
Current
Electrostatic
Discharge
IR
ESD
5. Drawing:
Top side (Dual Bonding pad)
Iz=5mA
5.8
6.3
6.8
V
IF=20mA
VR=4V
VR=5V
HBM
8.0
MIL-STD 883
1.2
V
100
nA
500
KV
(Top View)
6. Protection Circuit:
P
P
N-sub
Back side
Dual Bonding pad
LED
LED
Protection
Zener
Bonding pad
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8 - July - 04