WT-Z206V-AU4 Datasheet, PDF (1/1 Pages) Weitron Technology – Zener Diode Chips for ESD Bidrectional Protection

WT-Z206V-AU4
Zener Diode Chips for ESD Bidrectional Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application
1-2 This specification applies to N/P/N-Type silicon Zener diode chip(Vertical)
Device NO:WT-Z206V-AU4
2. Structure:
2-1. Planar type : Silicon Diode.
2-2. Electrodes :
Top side : Gold pad(Cathode).
3. Size:
Back side : Gold Layer(Cathode).
3-1. *Chip size : 6.88 mils x 6.88 mils (175 µm x 175 µm ).
3-2. Chip thickness : 3.3 ± 0.6 mils (85 ± 15 µm ).
3-3. Bonding pad : 4.5 mils x 4.5 mils (115 µm x 115 µm) .
3-4. Pattern drawing : Refer to the attached drawing.
*Including scribing line. The chip size is about 5.9mil(0.150mm) after dicing.
4. Electrical Characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Zener Voltage
Vz (Top)
Vz (Back)
I_z =5mA
5.3
5.5
-
-
6.8
7.0
V
Forward
Voltage
Vf
I_F =20mA
-
-
1.2
V
Leakage
IR
V=4V
-
-
Current
Electrostatic
Discharge
HBM
ESD
8.0
-
MIL-STD 883
Note:
1. Parallel with one LED
2. Single pad (one wire bonding applied only)
3. Double direction Zener diode protection
5. Drawing:
100 nA
-
KV
6. Protection Circuit:
Bonding pad
Top side
(Top View)
N
LED
Protection
P
Zener
N
Back Side
Bonding pad
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06 - Jan - 06