WT-Z106N-AU4 Datasheet, PDF (1/1 Pages) Weitron Technology – Zener Diode Chips for ESD Protection

WT-Z106N-AU4
Zener Diode Chips for ESD Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application
1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4
2. Structure:
2-1 Planar type: N/P Diode
2-2 Electrodes:
Top side:Gold Pad.(Cathode)
Back side:Gold Layer.(Anode)
3. Size:
3-1 Chip size: 6.88 mils x 6.88 mils (175 µm x 175 µm).
3-2 Chip thickness: 3.3 ± 0.6 mils (85 µm ± 15 µm).
3-3 Active area: 4.1 mils x 4.1 mils (105 µm x 105 µm).
3-4 Bonding pad: 4.5 mils x 4.5mils (115 µm x 115 µm).
3-5 Pattern drawing: Refer to the attached drawing.
4. Electrical Characteristics (Ta=25ºC)
Parameter
Zener Voltage
Symbol
Vz
Condition
Iz=5mA
Min. Typ. Max. Unit
5.7 -
6.7
V
Reverse Leakage
Current
IR
VR=4V
-
-
100 nA
Forward Voltage
Vf
IF=20mA
-
-
1.2
V
Electrostatic
Discharge
ESD
HBM
MIL-STD883
8
-
-
KV
5. Drawing:
Bonding pad
Back side
N
P -sub
Top side
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24-Nov-05