WT-Z105P-AU4 Datasheet, PDF (1/1 Pages) Weitron Technology – Zener Diode Chips for ESD Protection

WT-Z105P-AU4
Zener Diode Chips for ESD Protection
1. Feature:
1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application
1-2 This speci cation applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4
2. Structure:
2-1 Planar type: P/N Diode
2-2 Electrodes:
Top side:Gold Pad(Anode).
Back side:Gold Layer(Cathode).
3. Size:
3-1.^*Chip size : 5.9 mils x 5.9 mils (150 µm x 150 µm ).
3-2. Chip thickness : 3.3 ± 0.6 mils (85 ± 15 µm ).
3-3. Bonding pad : 3.54 mils x 3.54 mils (90 µm x 90 µm) .
3-4. Pattern drawing : Refer to the attached drawing.
*Including scribing line. The chip size is(125±10)²Âµm² after dicing.
Parameter
Zener Voltage
Symbol
Vz
Reverse Leakage
Current
IR
Condition Min.
Iz=5mA
5.7
VR=4V
-
VR=5V
-
Forward Voltage
Electrostatic
Discharge
Vf
ESD
IF=20mA
-
HBM
MIL-STD883
8.0
Typ. Max. Unit
-
6.7 V
-
100 nA
-
0.5 μA
-
1.2 V
-
-
KV
5. Drawing:
Bonding pad
Top side
Top View
6.Protection Circuit
P
N-sub
Back side
LED
Protection
Zener
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03 - Jul - 07