S9018LT1_10 Datasheet, PDF (1/3 Pages) Weitron Technology – PNP General purpose Transistors

Power Dissipation€Tamb=25°C
Junction Temperature
Storage Temperature
S9018LT1
V_CEO
Value
15
30
5.0
50
3
1
2
SOT-23
200
150
100u
100
100
E=15 Vdc,^IE= 0)
20
3.0
DC current gain (VCE=5V, IC= 1mA)
Collector-emitter saturation voltage (IC=10mA, IB= 1mA)
Base-emitter saturation voltage (IC=10mA, IB= 1mA)
Transition frequency(I _C =5.0 mAdc, VCE _{=5.0 Vdc, f=400MHz)}
CLASSIFICATION OF hFE
Rank
Range
L
70-105
15
30
5.0
O
0.1
u
0.05
u
0.1
u
hFE(1)
70
190
VCE(sat)
0.5
VBE(sat)
1.4
fT
600
-
MHz
H
105-190
S9018LT1=J8
WEITRON
1/3
http://www.weitron.com.tw
25-Oct-2010