S9014 Datasheet, PDF (1/4 Pages) Weitron Technology – NPN General Purpose Transistors

NPN General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
S9014
TO-92
1. EMITTER
1
2. BASE
3. COLLECTOR
23
Value
45
50
5.0
100
0.4
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 50 Vdc, IE=0)
Emitter Cutoff Current (VEB= 3.0Vdc, I _C=0)
Symbol
Min
Max
Unit
V(BR)CEO
45
-
Vdc
V(BR)CBO
50
-
Vdc
V(BR)EBO
5.0
-
Vdc
ICBO
IEBO
-
0.1
uAdc
-
0.1
uAdc
WEITRON
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