PZTA42 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistor

NPN Silicon Planar Epitaxial Transistor _COLLECTOR
2, 4
BASE
1
3
EMITTER
PZTA42
1. BASE
4
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation T_A=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Device Marking
PZTA42=A42
Value
Unit
300
V
300
V
6
V
500
mA
2
W
150
˚C
-55 to +150
˚C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(IC=1mA)
Collector-Base Breakdown Voltage
(IC=100µA)
Emitter-Base Breakdown Voltage
(IE=10 µA)
Collector-Emitter Cutoff Current
(VCB=300V)
Emitter-Base Cutoff Current
(VEB=6V)
Symbol Min
V_(BR)CEO
300
V_(BR)CBO
300
Typ
-
-
V_(BR)EBO
6
-
I_CBO
-
-
I_EBO
-
-
Max
-
-
Unit
V
V
-
V
100
nA
100
nA
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02-Jun-05