PZTA14 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN Darlington transistor

PZTA14
Darlington NPN Silicon Planar Epitaxial Transistor
P b Lead(Pb)-Free
BASE
1
COLLECTOR
2, 4
3
EMITTER
4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Value
Unit
30
V
30
V
10
V
300
mA
2
W
150
C
-55 to +150
C
Device Marking
PZTA14=A14
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC = 1mA , IB=0)
Symbol
Min
Max
Unit
V(BR)CEO
30
-
V
Collector-Base Breakdown Voltage (IC =100µA , IE=0)
V(BR)CBO 30
-
V
Emitter-Base Breakdown Voltage (IE = 10 µA , IC=0)
V(BR)EBO
10
-
V
Collector-Base Cutoff Current (VCB = 30V)
ICBO
-
100
nA
Emitter-Base Cutoff Current (VEB = 10Vdc , IC=0)
IEBO
-
100
nA
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
collector lead min. 0.93 inches.²
WEITRON
1/4
http://www.weitron.com.tw
22-Sep-05