PZT5401 Datasheet, PDF (1/4 Pages) Unisonic Technologies – HIGH VOLTAGE SWITCHING TRANSISTOR

PNP Epitaxial Planar Transistor
P b Lead(Pb)-Free
PZT5401
COLLECTOR
2, 4
BASE
1
3
EM ITTER
SOT-223
4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (T_A=25 C)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C(DC)
Value
Unit
-160
V
-150
V
-5
V
-600
A
Total Device Disspation T_a =25°C
Junction Temperature
P_D
1.5
W
Tj
+150
˚C
Storage Temperature
Tstg
-55 to +150
˚C
*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I_C=-100µA, I_E=0
Collector-Emitter Breakdown Voltage⁽¹⁾
I_C=-1mA, I_B=0
Emitter-Base Breakdown Voltage
I_E=-10µA, I_C=0
Collector Cut-O Current
V_CB=-120V, I_E=0
Emitter-Cut-O Current
V_EB=-3V, I_C=0
Symbol Min
Max
Max
Unit
BV_CBO -160
-
-
V
BV_CEO -150
-
-
V
BV_EBO
-5
-
-
V
I_CBO
-
-
-50
nA
I_EBO
-
-
-50
nA
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14-Aug-07