PZT2907A Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

PZT2907A
PNP Silicon Planar Epitaxial Transistor
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25 C
Junction Temperature
Storage, Temperature
BASE
1
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
COLLECTOR
2, 4
3
EM ITTER
SOT-223
4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
Value
-60
-60
-5.0
-600
1.5
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
Device Marking
PZT2907A=2907A
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc)
Collector-Emitter Cutoff Current (VCE= -30 Vdc, VBE=-0.5 Vdc)
Emitter-Base Cutoff Current (VEB= 3.0Vdc, IC =0)
Symbol
Min
Max
Unit
V(BR)CEO
-60
-
Vdc
V(BR)CBO
-60
-
Vdc
V(BR)EBO
-5.0
-
Vdc
IBEX
-
20
nAdc
ICEX
-
-50
nAdc
IEBO
-
100
nAdc
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
collector lead min. 0.93 inches.²
WEITRON
1/4
http://www.weitron.com.tw
Rev.A 26-Aug-05