PZT2222A Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN switching transistor

PZT2222A
NPN Silicon Planar Epitaxial Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
COLLECTOR
2, 4
BASE
1
3
EM ITTER
SOT-223
4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Value
Unit
40
Vdc
75
Vdc
6.0
Vdc
600
Adc
1.5
W
150
C
-65 to +150
C
Device Marking
PZT2222A=GT2222A
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 10 µAdc, IC=0)
Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc)
Collector-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc)
Emitter-Base Cutoff Current (VEB= 3.0Vdc, IC =0)
Symbol
Min
Max
Unit
V(BR)CEO
40
-
Vdc
V(BR)CBO
75
-
Vdc
V(BR)EBO
6.0
IBEX
-
ICEX
-
IEBO
-
-
Vdc
20
nAdc
10
nAdc
100
nAdc
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
collector lead min. 0.93 inches.²
WEITRON
http://www.weitron.com.tw