MXTA42 Datasheet, PDF (1/4 Pages) Weitron Technology – NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient ⁽¹⁾
Junction and Storage, Temperature Range
Symbol
PD
R _θJA
TJ,Tstg
Device Marking
MXTA42=A42
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
Collector Cutoff Current (VCB= 200 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc, IC=0)
1.FR-5=1.0 x 0.75 x 0.062 in.
MXTA42
SOT-89
1
1. BASE
2
3
2. COLLECTOR
3. EMITTER
Value
300
300
5.0
500
Max
500
4.0
250
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
C
Symbol
Min
Max
Unit
V(BR)CEO
300
-
Vdc
V(BR)CBO
300
-
Vdc
V(BR)EBO
5.0
-
Vdc
ICBO
IEBO
-
0.25
uAdc
-
0.1
uAdc
WEITRON
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