MUN5111DW_09 Datasheet, PDF (1/12 Pages) Weitron Technology – Dual Bias Resistor Transistor

Dual Bias Resistor Transistor
PNP Silicon
MUN5111DW Series
6
5
4
Q₂
R1 _R2
R2
Q₁
R1
1
2
3
6 ₅₄
1
23
SOT-363(SC-88)
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
IC
Value
-50
-50
-100
Unit
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (1)
Symbol
PD
R _θJA
Junction and Storage, Temperature Range
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 ^l 1.0 inch Pad
TJ,Tstg
Device Marking and Resistor Values
Device
Marking R1(K)
R2(K)
MUN5111
0A
MUN5112
0B
MUN5113
0C
MUN5114
0D
MUN5115
0E
MUN5116
0F
MUN5130
0G
10
10
22
22
47
47
10
47
10
4.7
1.0
1.0
Device
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
Max
187
1.5
493
325
-55 to +150
Marking
0H
0J
0K
0L
0M
0N
0P
Unit
mW
mW/ C
C/W
C
R1(K)
2.2
4.7
4.7
22
2.2
100
47
R2(K)
2.2
4.7
47
47
47
100
22
WEITRON
http://www.weitron.com.tw
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Rev.A 20-Jan-09