MUN5111 Datasheet, PDF (1/6 Pages) Weitron Technology – Bias Resistor Transistor PNP Silicon

Bias Resistor Transistor
PNP Silicon
MUN5111 Series
COLLECTOR
3
BASE _R1
1
R2
2
EMITTER
3
1
2
SOT-323(SC-70)
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
IC
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Symbol
PD
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature Range
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 ^l 1.0 inch Pad
R _θJA
TJ,Tstg
Value
50
50
100
Max
202 (1)
310 (2)
1.6 (1)
2.5 (2)
618
403
-55 to +150
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
C
Device Marking and Resistor Values
Device
Marking R1(K)
R2(K)
MUN5111
6A
MUN5112
6B
MUN5113
6C
MUN5114
6D
MUN5115
6E
MUN5116
6F
MUN5130
6G
10
10
22
22
47
47
10
47
10
4.7
1.0
1.0
Device
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
Marking
6H
6J
6K
6L
6M
6N
6P
R1(K)
2.2
4.7
4.7
22
2.2
100
47
R2(K)
2.2
4.7
47
47
47
100
22
WEITRON
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