MMBTH10 Datasheet, PDF (1/5 Pages) Diodes Incorporated – NPN SURFACE MOUNT VHF/UHF TRANSISTOR

NPN Silicon VHF/UHF Transistor
P b Lead(Pb)-Free
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBTH10
COLLECTOR
BASE
EMITTER
3
1
2
SOT-23
Value
25
30
3.0
50
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board⁽¹⁾
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Device Marking
MMBTH10=3EM
Symbol
PD
R θ_JA
TJ, Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB =0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE =0)
Emitter-Base Breakdown Voltage (IE= 10 uAdc, I _C=0)
Collector Cutoff Current (VCB= 25Vdc, I _E=0)
Emitter Cutoff Current (VEB= 2.0 Vdc, I _C =0)
1. FR-5=1.0 ^I I0.75 ^I I 0.062 in
Value
225
1.8
556
-55 to +150
Unit
mW
mW/ C
C/W
C
Symbol
Min
Max
Unit
V(BR)CEO
25
-
Vdc
V(BR)CBO
30
-
Vdc
V(BR)EBO _3.0
-
Vdc
ICBO
IEBO
-
100
nAdc
-
100
nAdc
WEITRON
1/5
http://www.weitron.com.tw
29-Aug-05