MMBTA94_06 Datasheet, PDF (1/4 Pages) Weitron Technology – High-Voltage PNP Transistor Surface Mount

High-Voltage PNP Transistor Surface Mount
P b Lead(Pb)-Free
MMBTA94
COLLECTOR
3
1
BASE
2
EMITTER
SOT-23
3
1
2
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-400
-400
-6.0
-150
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Device Marking
MMBTA94=4Z
Symbol
P_D
TJ
Tstg
Max
Unit
350
mW
+150
°C
-55 to +150
°C
Electrical Characteristics (T_A=25°C Unless Otherwise noted)
Characteristics
Symbol
Off Characteristics
Collector-Emitter BreakdownVoltage (IC=-1.0mAdc. IB=0)
V(BR)CEO
Collector-Base Breakdown Voltage (IC=-100μAdc, IE=0)
V(BR)CBO
Emitter-Base Breakdown Voltage (IE=-10 uAdc, IC=0)
V(BR)EBO
Collect Cuto Current (VCB= -400Vdc, IE=0)
I _CBO
Emitte Cuto Current (VEB=-6V, IC=0)
I _EBO
Emitte Cuto Current (VCE=-400V, VEB=0V)
ICES
Min
Max
Unit
-400
-
Vdc
-400
-
Vdc
-6.0
-
Vdc
-
-100 nAdc
-
-100 nAdc
-
-500 nAdc
WEITRON
1/4
http://www.weitron.com.tw
Rev.A 11-Jun-06