MMBTA94 Datasheet, PDF (1/3 Pages) Avic Technology – SOT-23-3L Plastic-Encapsulate Transistors

High-Voltage PNP Transistor
Surface Mount
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBTA94
COLLECTOR
3
1
BASE
2
EMITTER
SOT-23
3
1
2
Value
-400
-450
-6.0
-300
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R _JA
PD
R _JA
TJ,Tstg
Device Marking
MMB T A94=4D
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage⁽³⁾ (IC=-1.0mAdc. IB=0)
Collector-Base Breakdown Voltage (IC=-100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-10 uAdc, IC=0)
Collect Cutoff Current (VCB= -400Vdc, IE=0)
Emitte Cutoff Current (V_EB=-4V, IC=0)
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
Max
225
1.8
556
350
2.8
357
-55 to +150
Symbol
Min
V(BR)CEO
-400
V(BR)CBO
-450
V(BR)EBO
-6.0
ICBO
-
IEBO
-
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Max
Unit
-
Vdc
-
Vdc
-
Vdc
100
nAdc
100
nAdc
WEITRON
1/4
http://www.weitron.com.tw
23-Sep-05