MMBTA92 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP high-voltage transistor

MMBTA92
High-Voltage PNP Transistor
Surface Mount
P b Lead(Pb)-Free
Maximum Ratings
Rating
Collector-E m itter Voltage
Collector-B as e Voltage
E m itter-B as e VOltage
Collector Current-Continuous
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
VCEO
VCB _O
VE _{B O}
IC
3
1
2
SOT-23
Value
-3 0 0
-3 0 0
-5 .0
-5 0 0
Unit
Vdc
Vdc
Vdc
m Adc
Thermal Characteristics
Characteristics
Total Device Dis s ipation FR -5 B oard ⁽¹⁾
TA=25 C
Derate above 2 5 C
Thermal Res is tance, Junction to Ambient
Total Device Dis s ipation
Alumina S ubs trate, ⁽²⁾ T A=2 5 C
Derate above 2 5 C
Thermal Res is tance, Junction to Ambient
J unction and S torage, Tem perature
Symbol
PD
R _JA
PD
R _JA
T _{J,Ts tg}
Max
225
1.8
556
300
2.4
417
-5 5 to +1 5 0
Device Marking
MMB T A92=2D
Electrical Characteristics (T_A=25ºC Unless Otherwise noted)
Characteristics
Symbol
Min
Off Characteristics
Collector-E m itter B reakdown Voltage⁽³⁾ (IC=-1 . 0 m Adc. IB =0 )
V(B R )CE O
-3 0 0
Collector-B as e B reakdown Voltage (IC=-1 0 0 Adc, IE =0 )
V(B R )CB O
-3 0 0
E m itter-B as e B reakdown Voltage (IE =-1 0 Adc, IC=0 )
Collect Cutoff Current (VCB = -2 0 0 Vdc, IE =0 )
E m itte Cutoff Current (VE B =3 V, IC=0 )
1 .FR -5 =1 .0 x 0 . 7 5 x 0 .0 6 2 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3 . P uls e Tes t: P uls e Width 3 0 0 µS , Duty Cycle 2 . 0 % .
V(B R )E B O
-5 .0
ICB O
-
IE B O
-
Unit
mW
mW/ C
C/ W
mW
mW/ C
C/ W
C
Max
Unit
-
-
-
-0 .2 5
-0 .1
Vdc
Vdc
Vdc
Adc
Adc
WEITRON
1/4
http://www.weitron.com.tw
23-Sep-05