MMBTA42 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor

High-Voltage NPN Transistor
Surface Mount
MMBTA42
COLLECTOR
3
1
BASE
2
EMITTER
SOT-23
3
1
2
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
300
300
5.0
500
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Device Marking
MMBTA42=1D
Symbol
PD
R _JA
PD
R _JA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Off Characteristics
Collector-Emitter Breakdown Voltage⁽³⁾ (IC=1.0mAdc.IB=0)
V(BR)CEO
300
Collector-Base Breakdown Voltage (IC=100 Adc, IE=0)
V(BR)CBO
300
Emitter-Base Breakdown Voltage (IE=10 Adc, IC=0)
Base Cutoff Current (VCB=200 Vdc, IE=0)
Emitter Cutoff Current VEB=3V, IC=0
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
V(BR)EBO
5.0
ICBO
-
IEBO
-
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Max
Unit
-
Vdc
-
Vdc
-
Vdc
0.25 Adc
0.1
Adc
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