MMBTA13 Datasheet, PDF (1/5 Pages) Transys Electronics – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

MMBTA13
MMBTA14
NPN Transistors ^{Darlington Amplifier}
COLLECTOR 3
BASE
1
MAXIMUM R ATING S
R ating
C ollector- E mitter Voltage
C ollector- B as e Voltage
E mitter- B as e Voltage
C ollector C urrent - C ontinuous
THE R MAL C HAR AC TE R IS TIC S
C harac teris tic
Total Device Dis s ipation F R ±5 B oard(1)
TA = 25 C
Derate above 25 C
T hermal R es is tance J unction to Ambient
Total Device Dis s ipation
Alumina S ubs trate,(2) TA = 25 C
Derate above 25 C
T hermal R es is tance J unction to Ambient
J unction and S torage Temperature
DE VIC E MAR K ING
MMB TA13 = 1M; MMB T A14LT 1 = 1N
S ymbol
VCES
VCBO
VEBO
IC
Value
30
30
10
300
Unit
V dc
V dc
V dc
mAdc
S ymbol
PD
R _JA
PD
R _qJA
T _J , Ts _tg
Max
225
1.8
556
300
2.4
417
- 55 to +150
Unit
mW
mW/ C
C /W
mW
mW/ C
C /W
C
E L E C T R IC A L C HA R A C T E R IS T IC S (TA = 25 C unless otherwise noted)
C harac teris tic
OFF C HAR AC TE R IS TIC S
C ollector- E mitter B reakdown Voltage
(IC = 100 uAdc, V _{B E} = 0)
C ollector C utoff C urrent
(V _{C B} = 30 V dc, IE = 0)
E mitter C utoff C urrent
(V _{E B} = 10 V dc, IC = 0)
1. F R - 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
S ymbol
Min
V(BR _{)CE S}
30
IC _BO
-
IE _BO
-
EMITTER 2
3
1
2
S OT-23
Max
Unit
-
V dc
100
nAdc
100
nAdc
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