MMBT4403 Datasheet, PDF (1/6 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Switching Transistor PNP Silicon
M aximum R atings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBT4403
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
Value
-40
-40
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R _qJA
PD
R _qJA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Device Marking
MMBT4403=2T
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage⁽³⁾ (IC=-1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=-0.1mAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-0.1mAdc, IC=0)
Base Cutoff Current (VCE=-35 Vdc, VEB =-0.4 Vdc)
Collector Cutoff Current (VCE=-35Vdc, VEB=-0.4Vdc)
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width ^<=300 µS, Duty Cycle ^<=2.0%.
V(BR)CEO
-40
-
Vdc
V(BR)CBO
-40
-
Vdc
V(BR)EBO
-5.0
-
Vdc
IBEV
ICEX
-
-0.1 uAdc
-
-0.1 uAdc
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