MMBT4401 Datasheet, PDF (1/6 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Switching Transistor NPN Silicon
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBT4401
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R _qJA
PD
R _qJA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Device Marking
MMBT4401=2X
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Off C har acter istics
Collector-Emitter Breakdown Voltage⁽³⁾ (IC=1.0mAdc.IB=0)
V(BR)CEO
40
Collector-Base Breakdown Voltage (IC=0.1mAdc, IE=0)
V(BR)CBO
60
Emitter-Base Breakdown Voltage (IE=0.1mAdc, IC=0)
Base Cutoff Current (VCE=35 Vdc, VEB =0.4 Vdc)
Collector Cutoff Current (VCE=35Vdc, VEB=0.4Vdc)
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width ^<=300 µS, Duty Cycle ^<=2.0%.
V(BR)EBO
6.0
IBEV
-
ICEX
-
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Max
Unit
-
Vdc
-
Vdc
-
Vdc
0.1
uAdc
0.1
uAdc
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