MMBT3906W Datasheet, PDF (1/6 Pages) Weitron Technology – General Purpose Transistor PNP Silicon

General Purpose Transistor
PNP Silicon
M aximum R atings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation
TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
MMBT3906W
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-323(SC-70)
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R _qJA
TJ,Tstg
Max
150
833
-55 to +150
Unit
mW
C/W
C
Device Marking
MMBT3906W=2A
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage⁽²⁾ (IC=-1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0)
Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc)
Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc)
1. Device mounted FR4 glass epoxy printed circuit board
suing the minimun recommended footprint.
2. Pulse Test:Pulse Width ^<= 300 µS, Duty Cycle ^<= 2.0%.
V(BR)CEO
-40
-
Vdc
V(BR)CBO
-40
-
Vdc
V(BR)EBO
-5.0
-
Vdc
IBL
-
-50
nAdc
ICEX
-
-50
nAdc
WEITRON
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