MMBT3906 Datasheet, PDF (1/6 Pages) NXP Semiconductors – PNP switching transistor

General Purpose Transistor
PNP Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBT3906
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R _θJA
PD
R _θJA
TJ,Tstg
Device Marking
MMBT3906=2A
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage⁽³⁾ (IC=-1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0)
Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc)
Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc)
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width<=300 µS, Duty Cycle<=2.0%.
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
-40
-
Vdc
-40
-
Vdc
-5.0
-
Vdc
-
-50
nAdc
-
-50
nAdc
WEITRON
http://www.weitron.com.tw