MMBT3904W Datasheet, PDF (1/7 Pages) Weitron Technology – General Purpose Transistor NPN Silicon

General Purpose Transistor
NPN Silicon
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBT3904W
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-323(SC-70)
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Total Device Dissipation TA=25 C
PD
150
mW
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
R q_JA
TJ,Tstg
833
-55 to +150
C/W
C
Device Marking
MMBT3904W=AM
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Off C har acter istics
Collector-Emitter Breakdown Voltage⁽²⁾ (IC=1.0mAdc.IB=0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)
V(BR)CBO
60
-
Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0)
V(BR)EBO
6.0
-
Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc)
IBL
-
50
Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)
ICEX
-
50
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width ^<=300uS, Duty Cycle ^<= 2.0%
Vdc
Vdc
nAdc
nAdc
WEITRON
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