MMBT3904T Datasheet, PDF (1/7 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT3904T
General Purpose NPN SiliconTransistor
P b Lead(Pb)-Free
COLLECTOR
3
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
1
BASE
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
3
1
2
SC-89
SOT-523F
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Device Marking
MMBT3904T=AM
Symbol
P_D
R_θJA
P_D
R_θJA
T_J
Tstg
Max
200
1.6
600
300
2.4
400
-55 to +150
-55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage⁽³⁾ (I_C=1.0mA ,I_B=0)
Collector-Base Breakdown Voltage (I_C=10 µA , I_E=0)
Emitter-Base Breakdown Voltage (I_E=10 µA , I_C=0)
Base Cutoff Current (V_CE=30 V, V_EB =3.0 V)
Collector Cutoff Current (V_CE=30V, V_EB=3.0V)
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Test : Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_BL
I_CEX
Min Max Unit
40
-
V
60
-
V
6.0
-
V
-
50
nA
-
50
nA
WEITRON
1/7
http://www.weitron.com.tw
28-Sep-09