MMBT3904 Datasheet, PDF (1/7 Pages) NXP Semiconductors – NPN switching transistor

General Purpose Transistor
NPN Silicon
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
MMBT3904
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
PD
R _qJA
PD
R_qJA
TJ,Tstg
Device Marking
MMBT3904=1AM
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Off C har acter istics
Collector-Emitter Breakdown Voltage⁽³⁾ (IC=1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0)
Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc)
Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pukse Width^<=300 uS, Duty Cycle ^<=2.0%.
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Symbol
Min Max Unit
V(BR)CEO
40
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
6.0
-
Vdc
IBL
-
50
nAdc
ICEX
-
50
nAdc
WEITRON
http://www.weitron.com.tw