MMBT2907AW Datasheet, PDF (1/6 Pages) Weitron Technology – PNP General Purpose Transistors

PNP General Purpose Transistors
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1)
TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
DEVICE MARKING
MMBT2907AW=20
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
PD
R _qJA
TJ,Tstg
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)⁽²⁾
Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Collector Cutoff Current (VCE= -30 Vdc, VEB _(0ff)= -0.5Vdc)
Collector Cutoff Current
(VCB= -50 Vdc, IE=0)
(VCB= -50Vdc, IE=0, TA=125 C)
Base Cutoff Current (VCE= -30Vdc, VEB(off)= -0.5Vdc)
1.FR-5=1.0 x 0.75 x 0.062 in
2. Pulse Test:Pulse Width=300 us, Duty Cycle 2.0%
MMBT2907AW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-323(SC-70)
Value
-60
-60
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
Max
150
833
-55 to +150
Unit
mW
C/W
C
Symbol
Min
Max
Unit
V(BR)CEO _-60
-
-
V(BR)CBO _-60
-
-
V(BR)EBO _-5.0
-
-
ICEX
-50
Vdc
Vdc
Vdc
nAdc
ICBO
IBL
- -0.010
-
-10
nAdc
-
-50
nAdc
WEITRON
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