MMBT2907AT Datasheet, PDF (1/5 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PNP General Purpose Transistors
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
DEVICE MARKING
MMBT2907AT=2F
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R_θJA
TJ,Tstg
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)⁽²⁾
Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Collector Cutoff Current (VCB= -50 Vdc, IE=0)
Emitter Cutoff Current (VEB= -4 Vdc, IC=0)
1.FR-5=1.0 x 0.75 x 0.062 in
2. Pulse Test:Pulse Width=300 us, Duty Cycle <_2.0%
MMBT2907AT
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-523(SC-75)
Value
-60
-60
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
Max
Unit
150
mW
833
C/W
-55 to +150
C
Symbol
Min
Max
Unit
V(BR)CEO _-60
-
V(BR)CBO _-60
-
V(BR)EBO _-5.0
-
ICBO
-
-10
IEBO
-
-10
Vdc
Vdc
Vdc
nAdc
nAdc
WEITRON
http://www.weitron.com.tw