MJE13003B Datasheet, PDF (1/4 Pages) Weitron Technology – High Voltage Fast-switching NPN Power Transistor

WEITRON
High Voltage Fast-switching
NPN Power Transistor
P b Lead(Pb)-Free
DESCRIPTION:
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high switching
speeds and medium voltage capability.
COLLECTOR
2.
3.
BASE
1.
EMITTER
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The MJE13003B is designed for use in compact uorescent
lamp application.
FEATURE:
* Medium Voltage Capability
* Low Spread Of Dynamic Parameters
* Minimum Lot-to-lot Spread For Reliable Operation
* Very High Switching Speed
APPLICATIONS:
* Electronic Ballasts For Fluorescent Lighting
MJE13003B
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Emitter Voltage (V_BE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (t_p < 5 ms)
Total Dissipation at T_amb = 25 ^oC
Thermal Resistance Junction-ambient
Operating Junction Temperature
Storage Temperature
Symbol
V_CES
V_CEO
VEBO
IC
ICM
I_B
I_BM
P_tot
RθJA
T_j
T_stg
Value
700
400
9
1
2
0.5
1
1
120
150
-65 to 150
Unit
V
V
V
A
A
A
A
W
o_C/W
o_C
o_C
WEITRON
1/4
hpp://www.weitron.com.tw
16-May-08