MJD41C Datasheet, PDF (1/5 Pages) ON Semiconductor – Complementary Power Transistors

NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
Features:
* Designed for general purpose ampli er and low speed
switching applications.
* Monolithic Construction With Built–in Base–Emitter Resistors.
MJD41C
1.BASE
2.COLLECTOR
3.EMITTER
3
2
1
D-PAK(TO-252)
ABSOLUTE MAXIMUM RATINGS (T_A=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
T_stg
Value
Unit
100
V
100
V
5.0
V
6.0
A
1.25
W
+150
˚C
-65 to +150
˚C
WEITRON
1/5
http://www.weitron.com.tw
19-Nov-09