MGSF1P02 Datasheet, PDF (1/5 Pages) Weitron Technology – Power MOSFET P-Channel

Power MOSFET
P-Channel
Features:
*Low On-Resistance : 0.35Ω
*Low Input Capacitance: 130 PF
*Low Out put Capacitance : 120 PF
*Low Threshole : 1.7V(TYE)
*Fast Switching Speed : 2.5ns
MGSF1P02
3 DRAIN
1
GATE
2
SOURCE
SOT-23
3
1
2
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
20
V
Gate-Source Voltage
V_GS
±20
V
Continuous Drain Current (TA=25 C)
Pulsed Drain Current^{(1)(tp<_10us)}
Power Dissipation (TA=25 C)
Thermal Resistance Junction-to-Ambient
I_D
I_DM
P_D
R _θJA
750
mA
2000
mA
400
mW
300
C/W
Operating Junction and Storage
Temperature Range
T_J, Tstg
-55 to 150
C
Device Marking
MGSF1P02=PC
Note 1:
Pulse Width Limited by Maximum Junction Temperature
WEITRON
http://www.weitron.com.tw