MCR100-6 Datasheet, PDF (1/2 Pages) Semtech Corporation – SCR

Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
P b Lead(Pb)-Free
A
MCR100-6/MCR100-8
SCRs
0.8 A RMS
400/600 Voltage
G
C
Maximum Ratings (T_A=25°C unless otherwise noted)
Rating
Symbol
MCR100-6
Repetitive Peak Off-stage Voltage
VDRM
400
Collector-Base Voltage
ITRMS
1.Cathode
2.Gate
3.Anode
1
2
3
TO-92
MCR100-8
600
0.8
Junction Temperature Range
TJ
+150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
On State Voltage⁽¹⁾
I_TM = 1A
VTM
-
Gate Trigger Voltage
V_AK = 7V
VGT
-
Peak Repetitve Forward and Reverse Blocking Voltage
I_{DRM =} 10μA , V_MAX = 10V
MCR100-6 ^{VDRM, VRRM}
400
MCR100-8
600
Peak Forward or Reverse Blocking Current
V_AK = Rated, V_DRM or V_RRM
IDRM, IRRM
-
Holding Current
I_HL = 20mA, A_V = 7V
IH
-
Gate Trigger Current
V_AK = 7V
A2
5
IGT
A1
15
A
30
B
80
Note 1. Forward current applied for 1 ms maximum duration, duty cycle ≤ 1%
Max
1.7
0.8
-
10
5
15
30
80
200
Unit
V
A
°C
°C
Unit
V
V
V
μA
mA
μA
WEITRON
http://www.weitron.com.tw
1/2
30-Jan-07