KTC3875 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Plastic-Encapsulate Transistors
NPN Silicon
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Device Marking
KTC3875=AL
Symbol
PD
R _θJA
T_J, Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 60Vdc , IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc , IC=0)
1. FR-5=1.0 ^I I0.75 ^I I 0.062 in
KTC3875
COLLECTOR
BASE
EMITTER
3
1
2
SOT-23
Value
50
60
5.0
150
Value
150
1.2
833
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
C
Symbol
Min
Max
Unit
V(BR)CEO
50
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
5.0
-
Vdc
ICBO
-
0.1
uAdc
IEBO
-
0.1
uAdc
WEITRON
http://www.weitron.com.tw