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| KTA1664_10 Datasheet, PDF (1/3 Pages) Weitron Technology – PNP Epitaxial Pl anar Transistors | |||
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PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25ËC)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
KTA166
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
Limits
Unit
-35
V
-30
V
-5.0
V
-0.8
A
0.5
W
-55 to +150
ËC
-55 to +150
ËC
ELECTRICAL CHARACTERISTICS(TA=25ËC unless otherwise noted)
Parameter
Symbol
Min
Typ Max Unit
Collector-Base Breakdown Voltage
IC=-1mA, IE=0
Collector-Emitter Breakdown Voltage
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
IE=-1mA, IC =0
Collector Cutoï¬ Current
VCB=-35V, IE=0
Collector Cutoï¬ Current
VEB=-5V, IC=0
BVCBO
-35
BVCEO
-30
BVEBO
-5
ICBO
-
IEBO
-
-
-
V
-
-
V
-
-
V
-
-0.1
µA
-
-0.1
µA
WEITRON
1/3
http://www.weitron.com.tw
-JuQ-0
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